大拱桥--暨南大学学生门户 » 图书馆 » 半导体技术(分类号：TN3)(共496本)

Proceedings of the ninth International Conference on Amorphous and Liquid Semiconductors, Grenoble, France, July 2nd-8th, 1981

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索取号：TN304.83/E801/9.1
作者：International Conference on Amorphous and Liquid Semiconductors (9th : 1981 : Grenoble、 France)、Chakraverty、 B. K.、Kaplan、 D.、International Union of Pure and Applied Physics.、
出版社：[Paris] : Éditions de physique, 1981.

Electronic processes in non-crystalline materials

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索取号：TN304.8/E801
作者：Mott、 N. F.、Davis、 E. A.、
出版社：Oxford : Clarendon Press, 1971.

Gallium arsenide: proceedings of the international symposium organized by the Institute of Physics and the Physical Society in co-operation with the Avionics Laboratory of the U.S. Air Force, Reading, September 1966

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索取号：TN304.23-53/E701/1966
作者：
出版社：London : Institute of Physics & the Physical Society, 1967].

Digest of papers : 1973 symposium on semiconductor memory testing, October 2 and 3, 1973, Rickshaw Inn, Cherry Hill, N. J.

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索取号：TN304.07-53/E801/1973
作者：Symposium on Semiconductor Memory Testing (1973 : Cherry Hill)、IEEE Computer Society Mideastern Area Committee.、The Philadelphia Chapter of the Institute of Electrical and Electronics Engineers、 Inc.、
出版社：New York : IEEE, c1973.

CMOS databook

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索取号：TN303-62/E901
作者：
出版社：Santa Clara, Calif. : National Semiconductor Corporation, 1980?

Applications of charge-coupled devices : lecture notes issued to participants in a 2-day residential summer school, Southampton, July 15-16, 1976

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索取号：TN303-53/E801
作者：
出版社：Southampton : [s.n.], 1976.

Characteristics and limitations of transistors

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索取号：TN3/E701
作者：Thornton、 Richard D.、
出版社：New York : Wiley, [1966].

High-speed semiconductor devices

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索取号：TN303/E992
作者：
出版社：New York : Wiley, c1990.

Semiconductor silicon 1977 : proceedings of the third International Symposium on Silicon Materials Science and Technology

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索取号：TN304.1-53/E801/3
作者：International Symposium on Silicon Materials Science and Technology (3rd : 1977 : Philadelphia、 Pa.)、Huff、 Howard R.、Sirtl、 Erhard.、Electrochemical Society. Electronics Division.、Electrochemical Society. Electrothermics and Metallurgy Division.、
出版社：Princeton, N.J. : Electronics and Electrothermics and Metallurgy Divisions, Electrochemical Society, c1977.

Transistor specifications manual

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索取号：TN32-62/E801
作者：Sams (Howard W.) Engineering Staff.、
出版社：Indianapolis : Howard W. Sams & Co., Inc., c1972.

Analysis and synthesis of tunnel diode circuits

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索取号：TN312.2/E701
作者：Scanlan、 J. O、
出版社：New York : Wiley, [c1966].

Physics and applications of semiconductor microstructures

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索取号：TN301/E901
作者：Jaros、 M.、
出版社：Oxford [England] : Clarendon Press ; New York : Oxford University Press, 1989.

Ion implantation of semiconductors

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索取号：TN305.3/E801
作者：Carter、 G. (George)、 1934-、Grant、 W. A. (William Alexander)、 1941-、
出版社：London : E. Arnold, 1976.

Polarons in ionic crystals and polar semiconductors : Antwerp Advanced Study Institute 1971 on Fr?hlich polarons and electron-phonon interaction in polar semiconductors

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索取号：TN304.6/E801
作者：Antwerp Advanced Study Institute on Fr?hlich Polarons and Electron-Phonon Interaction in Polar Semiconductors (1971)、Devreese、 J. T. (Jozef T.)、
出版社：Amsterdam : North-Holland Publishing Company ; New York : American Elsevier Publishing Co., 1972.

Boron: synthesis, structure, and properties : proceedings of the conference on Boron

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索取号：TN304.16-53/E701
作者：International Symposium on Boron (1st : 1959 : Asbury Park、 N.J.)、GauĺЕ、 G. K. (Gerhart K.)、Nye、 W. F. (William Frederick)、 1917-、Kohn、 J. A. (Jack Arnold)、 1925-、　Institute for Exploratory Research (U.S.)、
出版社：New York : Plenum Press, 1960.

Materials used in semiconductor devices

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索取号：TN304/E701
作者：
出版社：New York, N.Y. : Interscience Publishers, [1966, c1965]