大拱桥--暨南大学学生门户 » 图书馆 » 一般性问题(分类号：TN30)(共236本)

半导体的检测与分析

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索取号：TN304.07/841.2
作者：许振嘉、
出版社：北京 : 科学出版社, 2007

二氧化钛半导体光催化材料离子掺杂

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索取号：TN305.3/20071
作者：陈建华、龚竹青、
出版社：北京 : 科学出版社, 2006

Solid state electronic devices = 固态电子器件

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索取号：TN303/E20072.6
作者：Streetman、 Ben G.、Banerjee、 Sanjay.、
出版社：北京 : 人民邮电出版社, 2007.

Semiconductor crystal manufacture

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索取号：TN304.053/E701
作者：Sittig、 Marshall.、
出版社：Park Ridge, N.J. : Noyes Development Corp., 1969.

Semiconductor junctions and devices : theory to practic

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索取号：TN305.93/E701
作者：Burford、 William B. (William Berryman)、 1916-、Verner、 H. Grey (Harry Grey)、 1918- joint author.、
出版社：New York : McGraw-Hill, 1965.

Liquid semiconductors

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索取号：TN304.83/E701
作者：Glazov、 Vasiliæi Mikhaæilovich.、Chizhevskaëiìa、 Svetlana Nikolaevna、 joint author.、Glagoleva、 Natal§ëiìa Nikolaevna、 joint author.、
出版社：New York, Plenum Press, 1969.

Semiconductor silicon 1990 : proceedings of the Sixth International Symposium on Silicon Materials Science and Technology

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索取号：TN304.1-53/E801/6
作者：International Symposium on Silicon Materials Science and Technology (6th : 1990 : Montréal、 Québec)、Huff、 Howard R.、Barraclough、 Keith G.、Chikawa、 J. (Junichi)、 1930-、Electrochemical Society. Electronics Division.、Electrochemical Society. Dielectrics and Insulation Division.、
出版社：Pennington, NJ : Electrochemical Society, c1990.

Gallium arsenide and related compounds (Edinburgh), 1976 : proceedings of the sixth International Symposium on Gallium Arsenide and Related Compounds, Edinburgh Conference, 20-22 September 1976

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索取号：TN304.23-53/E801/6
作者：International Symposium on Gallium Arsenide and Related Compounds (6th : 1976 : Edinburgh)、Hilsum、 Cyril.、
出版社：Bristol : Institute of Physics, 1977.

Gallium arsenide and related compounds, 1978 : proceedings of the Seventh International Symposium on Gallium Arsenide and Related Compounds, held in St. Louis, Missouri, 24-27 September 1978

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索取号：TN304.23-53/E801/7
作者：International Symposium on Gallium Arsenide and Related Compounds (7th : 1978 : St. Louis)、Wolfe、 Charles M.、United States. Air Force. Office of Scientific Research.、
出版社：Bristol, Eng. : Institute of Physics, c1979.

Compound semiconductors strained layers and devices

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索取号：TN304.2/E20001
作者：Jain、 S. C. (Suresh C.)、 1926-、Willander、 M.、Overstraeten、 R. van.、
出版社：Boston : Kluwer Academic Publishers, 2000.

Fundamentals of semiconductor devices = 半导体器件基础

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索取号：TN303/E20071
作者：Anderson、 Betty Lise.、Anderson、 Richard L.、
出版社：北京 : 清华大学出版社, 2006.

Semiconductor manufacturing technology = 半导体制造技术

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索取号：TN305/E20061
作者：Quirk、 Michael、 1953-、Serda、 Julian.、
出版社：Beijing : Publishing House of Electronics Industry : Pearson Education Asia Ltd., 2006.

An introduction to Semiconductor devices = 半导体器件导论

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索取号：TN303/E20061
作者：Neamen、 Donald A.、
出版社：北京 : 清华大学出版社, 2006.

Progress in silicon materials : from microelectronics to photovoltaics and optoelectronics

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索取号：TN304-532/E20041
作者：Sino-German Symposium on Progress in Silicon Materials: From Microelectronics to Photovoltaics and Optoelectronics (2002 : Hangzhou、 China)、Yang、 Deren (杨德仁）、
出版社：Beijing : Science Press, c2004.

Amorphous and nanocrystalline silicon-based films--2003 : Symposium held April 22-25, 2003, San Francisco, California, U.S.A.

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索取号：TN304.8-532/E20041/2003
作者：
出版社：Warrendale, Pa. : Materials Research Society, c2003.

Semiconductor-device electronics = 半导体器件电子学

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索取号：TN301/E20031
作者：Warner、 R. M.、Grung、 B. L.、
出版社：Beijing : Publishing House of Electronics Industry, 2002.