大拱桥--暨南大学学生门户 » 图书馆 » 元素半导体 » Defects in silicon : proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989
名称 Defects in silicon : proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989
索引号 TN304.1-53/E901/1989
分类号 TN304.1-53/E901
TN304.1(元素半导体)
TN304(材料)
TN30(一般性问题)
TN3(半导体技术)
TN(无线电电子学、电信技术)
T(工业技术)
作者 Symposium B on Science and Technology of Defects in Silicon (1989 : Strasbourg、 France)、Ammerlaan、 C. A. J. (Cornelis Antonius Josephus)、Chantre、 A.、Wagner、 P.、European Materials Research Society. Meeting (1989 : Strasbourg、 France)、
出版社 Amsterdam ; New York : North-Holland ; New York, NY, USA : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1989.
ISBN
页数 xii, 505 p. : ill. ; 27 cm.
价格
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简介
注解 "Reprinted from Materials Science & Engineering, Vol. B4(1/4)."--T.p. verso. 附註 Includes bibliographical references and indexes.